| PART |
Description |
Maker |
| M29KDCL3-32T M29KW064E90N1T M29KW064E90ZA1T |
64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash Memory
64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash?Memory
|
STMicroelectronics
|
| M58LW064C110ZA6T M58LW064 M58LW064C M58LW064C110N1 |
64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58LW064D110ZA6 M58LW64D M58LW064D M58LW064D110N1 |
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M36W0R6050B0ZAQT |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
|
| M29KW016E 8769 M29KW016E90ZA1T M29KW016E110M1T M29 |
16 MBIT (1MB X16, UNIFORM BLOCK)3V SUPPLY LIGHTFLASHMEMORY
16 Mbit (1Mb x16 / Uniform Block) 3V Supply LightFlash Memory
16 MBIT (1MB X16, UNIFORM BLOCK)3V SUPPLY LIGHTFLASH? MEMORY
From old datasheet system
16 Mbit (1Mb x16, Uniform Block) 3V Supply LightFlash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M58LW032A90ZA6T M58LW032A90ZA1T M58LW032A90N6T M58 |
32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory 32兆位Mb x16插槽，统一座，突发3V电源快闪记忆
32 Mbit 2Mb x16 / Uniform Block / Burst 3V Supply Flash Memory
|
STMicroelectronics N.V.
ST Microelectronics
|
| M29W320EB70N1 M29W320EB70N1E M29W320EB90N6T M29W32 |
32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory
32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory 32兆位Mb的x8或功能的2Mb x16插槽，引导块V电源快闪记忆
|
STMicroelectronics N.V.
ST Microelectronics
|
| M58MR064-ZCT M58MR064D120ZC6T M58MR064C100ZC6T M58 |
64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory 64兆位4Mb的x16插槽，复用的I / O，双行，突发1.8V电源快闪记忆
|
STMicroelectronics N.V.
意法半导
|
| M29W641DH12ZA1E M29W641DH12ZA1F M29W641DH12ZA6E M2 |
4M X 16 FLASH 3V PROM, 70 ns, PDSO48
Low-Power Single Bus Buffer Gate with 3-State Output 5-SC70 -40 to 85 64兆位4Mb的x16插槽，统一3V电源快闪记忆
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽，统一3V电源快闪记忆
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽，统一V电源快闪记忆
Low-Power Single 2-Input Positive-AND Gate 5-SC70 -40 to 85 64兆位4Mb的x16插槽，统一V电源快闪记忆
Low-Power Single Schmitt-Trigger Buffer 5-SOT-23 -40 to 85 64兆位4Mb的x16插槽，统一V电源快闪记忆
Shielded Multiconductor Cable; Number of Conductors:25; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes
Shielded Multiconductor Cable; Number of Conductors:15; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes
Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes
Low-Power Single 2-Input Positive-AND Gate 5-SOT-23 -40 to 85
Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid RoHS Compliant: Yes
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory
Low-Power Single Buffer/Driver with Open-Drain Outputs 5-DSBGA -40 to 85
|
NUMONYX
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M27V322-100F1 M27V322-150XP6 M27V322 M27V322-100B1 |
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
Fuses, 150mA 250V SB 5X15 BULK
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM 32兆位Mb x16低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M58WR064FB60ZB6 M58WR064F-ZB M58WR064F-ZBE M58WR06 |
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
